SIAA40DJ www.vishay.com vishay siliconix s16-1460-rev. b, 25-jul-16 1 document number: 75671 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 40 v (d-s) mosfet marking code : a l ordering information : SIAA40DJ-t1-ge3 (lead (pb)-free and halogen-free) features ? trenchfet ? gen iv power mosfet ? tuned for the lowest r ds - q oss fom ? thermally enhanced powerpak ? sc-70 package - small footprint area ? 100 % r g and uis tested ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ?dc/dc converters ? synchronous rectification ? motor drive control ? battery management and protection ?load switch notes a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady stat e conditions is 80 c/w. product summary v ds (v) r ds(on) ( ? ) max. i d (a) a q g (typ.) 40 0.0125 at v gs = 10 v 30 7.7 0.0160 at v gs = 4.5 v 26.6 powerpak ? s c-70-6l s in g le 3 g 2 d 1 d s 4 d 5 d 6 bottom view 2.05 mm 2.05 mm 1 top view s 7 n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs +20 / -16 continuous drain current (t j = 150 c) t c = 25 c i d 30 a t c = 70 c 24 t a = 25 c 12.8 b, c t a = 70 c 10.2 b, c pulsed drain current (t = 100 s) i dm 60 continuous source-drain diode current t c = 25 c i s 16 t a = 25 c 2.9 b, c single-pulse avalanche current l = 0.1 mh i as 10 single-pulse avalanche energy e as 5mj maximum power dissipation t c = 25 c p d 19.2 w t c = 70 c 12.3 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5
SIAA40DJ www.vishay.com vishay siliconix s16-1460-rev. b, 25-jul-16 2 document number: 75671 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 - - v v ds temperature coefficient ? v ds /t j i d = 250 a -23- mv/c v gs(th) temperature coefficient ? v gs(th) /t j --5- gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 - 2.4 v gate-source leakage i gss v ds = 0 v, v gs = +20 v / -16 v - - 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v - - 1 a v ds = 40 v, v gs = 0 v, t j = 55 c - - 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 10 v 20 - - a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 5 a - 0.0096 0.0125 ? v gs = 4.5 v, i d = 5 a - 0.0125 0.0160 forward transconductance a g fs v ds = 10 v, i d = 5 a - 50 - s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz - 1200 - pf output capacitance c oss - 165 - reverse transfer capacitance c rss -21- c rss /c iss ratio - 0.017 0.034 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 10 a - 16 24 nc v ds = 20 v, v gs = 4.5 v, i d = 10 a -7.712 gate-source charge q gs -3.2- gate-drain charge q gd -1.8- output charge q oss v ds = 20 v, v gs = 0 v - 8 - gate resistance r g f = 1 mhz 0.4 1.9 3.8 ? turn-on delay time t d(on) v dd = 20 v, r l = 4 ? i d ? 5 a, v gen = 4.5 v, r g = 1 ? -1330 ns rise time t r -4590 turn-off delay time t d(off) -1120 fall time t f -2245 turn-on delay time t d(on) v dd = 20 v, r l = 4 ? i d ? 5 a, v gen = 10 v, r g = 1 ? -612 rise time t r -2140 turn-off delay time t d(off) -1330 fall time t f -815 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - 16 a pulse diode forward current (t = 100 s) i sm --60 body diode voltage v sd i s = 5 a, v gs = 0 v - 0.8 1.2 v body diode reverse recovery time t rr i f = 5 a, di/dt = 100 a/s, t j = 25 c -2550ns body diode reverse recovery charge q rr -1020nc reverse recovery fall time t a -13- ns reverse recovery rise time t b -12-
SIAA40DJ www.vishay.com vishay siliconix s16-1460-rev. b, 25-jul-16 3 document number: 75671 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge transfer characteristics capacitance on-resistance vs. junction temperature 10 100 1000 10000 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 5 v v gs = 4 v v gs = 3 v 10 100 1000 10000 0 0.005 0.010 0.015 0.020 0 102030405060 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 0 4 8 12 16 20 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 20 v v ds = 32 v v ds = 10 v i d = 10 a 10 100 1000 10000 0 10 20 30 40 50 60 00.511.522.533.54 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 300 600 900 1200 1500 0 5 10 15 20 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 5 a v gs = 10 v v gs = 4.5 v
SIAA40DJ www.vishay.com vishay siliconix s16-1460-rev. b, 25-jul-16 4 document number: 75671 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 10 100 1000 10000 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line v gs(th) (v) t j - temperature (c) 2nd line i d = 250 a 10 100 1000 10000 0 0.01 0.02 0.03 0.04 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 125 c i d = 5 a 10 100 1000 10000 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line 2nd line 2nd line power (w) time (s) 10 100 1000 10000 0.01 0.1 1 10 100 0.1 1 10 100 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified limited by r ds(on) (1) t a = 25 c single pulse 100 ms 10 ms 1 ms 100 s 1s 10 s dc i dm limited i d limited bvdss limited
SIAA40DJ www.vishay.com vishay siliconix s16-1460-rev. b, 25-jul-16 5 document number: 75671 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating a power derating note a. the power dissipation p d is based on t j max. = 150 c, using junction-to- case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 10 100 1000 10000 0 5 10 15 20 25 30 35 0255075100125150 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line 10 100 1000 10000 0 5 10 15 20 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line t c - case temperature (c) 2nd line power dissipation (w)
SIAA40DJ www.vishay.com vishay siliconix s16-1460-rev. b, 25-jul-16 6 document number: 75671 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75671 . 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 80 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 single pulse 0.05 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix document number: 70486 www.vishay.com revision: 21-jan-08 11 application note recommended pad layout for powerpak ? sc70-6l single 1 0.300 (0.012) 0.350 (0.014) 2.200 (0.087) 1.500 (0.059) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) dimensions in mm/(inches) return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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